View PDTB123EU_7716243.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description pnp resistor-equipped transistor (ret) fa mily in a very small sot323 (sc-70) surface-mounted device (smd) plastic package. 1.2 features 1.3 applications pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors rev. 1 ? 6 may 2014 product data sheet sot323 table 1. product overview type number package npn complement package configuration nxp jeita jedec pdtb113eu sot323 sc-70 - pdtd113eu very small pdtb113zu pdtd113zu PDTB123EU pdtd123eu pdtb123yu pdtd123yu pdtb143eu pdtd143eu pdtb143xu pdtd143xu pdtb114eu pdtd114eu ? 500 ma output cu rrent capability ? ? 10 % resistor ratio tolerance ? built- in bias resistors ? aec-q101 qua lified ? simplifies circuit des ign ? high temperature applications ? u p to 175 c ? reduces component count ? ic in puts control ? switching loads ? cost-saving a lternative to bc807 or bc817 series transistors in digital applications
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 2 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 1.4 quick reference data 2. pinning information 3. ordering information table 2. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - ? 50 v i o output current - - ? 500 ma r1 bias resistor 1 (input) pdtb113eu 1 k? pdtb113zu 1 k? PDTB123EU 2.2 k? pdtb123yu 2.2 k? pdtb143eu 4.7 k? pdtb143xu 4.7 k? pdtb114eu 10 k? r2 bias resistor 2 (base-emitter) pdtb113eu 1 k? pdtb113zu 10 k? PDTB123EU 2.2 k? pdtb123yu 10 k? pdtb143eu 4.7 k? pdtb143xu 10 k? pdtb114eu 10 k? table 3. pinning pin description simplified outline graphic symbol 1 input (base) 2 gnd (emitter) 3 output (collector) 12 3 sym003 3 2 1 r1 r2 table 4. ordering information type number package name description version pdtb1xxxu series sc-70 plastic surface-mounted package; 3 leads sot323
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 3 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 4. marking [1] * = placeholder for manufacturing site code 5. limiting values table 5. marking codes type number marking code [1] pdtb113eu zg* pdtb113zu zh* PDTB123EU zj* pdtb123yu zk* pdtb143eu zl* pdtb143xu zm* pdtb114eu zn* table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - ? 50 v v ceo collector-emitter voltage open base - ? 50 v v ebo emitter-base voltage open collector pdtb113eu - ? 10 v pdtb113zu - ? 5 v PDTB123EU - ? 10 v pdtb123yu - ? 5 v pdtb143eu - ? 10 v pdtb143xu - ? 7 v pdtb114eu - ? 10 v v i input voltage pdtb113eu ? 10 +10 v pdtb113zu ? 10 +5 v PDTB123EU ? 12 +10 v pdtb123yu ? 12 +5 v pdtb143eu ? 30 +10 v pdtb143xu ? 30 +7 v pdtb114eu ? 50 +10 v i o output current - ? 500 ma
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 4 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors [1] device mounted on an fr4 printed-circuit board (pcb), singl e-sided copp er, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, 4-layer copper, tin-plated and standard footprint. 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, 4-layer copper, tin-plated and standard footprint. p tot total power dissipation t amb ? 25 ?c [1] - 300 mw [2] - 425 mw t j junction temperature - 175 ?c t amb ambient temperature ? 55 +175 ?c t stg storage temperature ? 55 +175 ?c (1) fr4 pcb, 4-layer copper, standard footprint (2) fr4 pcb, single-sided copper, standard footprint. fig 1. power derating curves table 6. limiting values ?continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit aaa-012426 t amb (c) -75 225 125 25 200 300 100 400 500 p tot (mw) 0 (1) (2) table 7. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 500 k/w [2] - - 353 k/w
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 5 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors fr4 pcb, single-sided copper, tin-plated and standard footprint fig 2. transient thermal impedance from junction to ambi ent as a function of pulse duration for sot323/sc-70; typical values fr4 pcb, 4-layer copper, tin-plated and standard footprint. fig 3. transient thermal impedance from junction to ambi ent as a function of pulse duration for sot323/sc-70; typical values aaa-012062 10 1 10 2 10 3 z th(j-a) (k/w) 10 -1 10 -5 10 10 -2 10 -4 10 2 10 -1 t p (s) 10 -3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 aaa-012063 10 -5 10 10 -2 10 -4 10 2 10 -1 t p (s) 10 -3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 6 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 7. characteristics table 8. characteristics t amb = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = ? 40 v; i e = 0 a - - ? 100 na v cb = ? 50 v; i e = 0 a - - ? 100 na i ceo collector-emitter cut-off current v ce = ? 50 v; i b = 0 a - - ? 0.5 ? a i ebo emitter-base cut-off current v eb = ? 5 v; i c = 0 a pdtb113eu - - ? 4.0 ma pdtb113zu - - ? 0.8 ma PDTB123EU - - ? 2.0 ma pdtb123yu - - ? 0.65 ma pdtb143eu - - ? 0.9 ma pdtb143xu - - ? 0.6 ma pdtb114eu - - ? 0.4 ma h fe dc current gain v ce = ? 5 v; i c = ? 50 ma pdtb113eu 33 - - pdtb113zu 70 - - PDTB123EU 40 - - pdtb123yu 70 - - pdtb143eu 60 - - pdtb143xu 70 - - pdtb114eu 70 - - v cesat collector-emitter saturation voltage i c = ? 50 ma; i b = ? 2.5 ma - - ? 10 0 mv v i(off) off-state input voltage v ce = ? 5 v; i c = ? 100 ? a pdtb1 13eu ? 0. 6 ? 1.0 ? 1.5 v pdtb1 13zu ? 0. 3 ? 0.6 ? 1.0 v pdtb1 23eu ? 0. 6 ? 1.1 ? 1.8 v pdtb1 23yu ? 0. 4 ? 0.65 ? 1.0 v pdtb1 43eu ? 0. 6 ? 0.9 ? 1.5 v pdtb1 43xu ? 0. 5 ? 0.75 ? 1.1 v pdtb1 14eu ? 0. 6 ? 1.0 ? 1.5 v v i(on) on-state input voltage v ce = ? 0.3 v; i c = ? 20 ma pdtb113eu ? 1. 0 ? 1.4 ? 1.8 v pdtb1 13zu ? 0. 4 ? 0.8 ? 1.4 v pdtb1 23eu ? 1. 0 ? 1.5 ? 2.0 v pdtb123yu ? 0. 5 ? 1.0 ? 1.4 v pdtb1 43eu ? 1. 0 ? 1.7 ? 2.2 v pdtb1 43xu ? 1. 0 ? 1.4 ? 2.0 v pdtb1 14eu ? 1. 0 ? 2.2 ? 3.0 v
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 7 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors [1] characteristics of built-in transistor. r1 bias resistor 1 (input) pdtb113eu 0.7 1.0 1.3 k? pdtb113zu 0.7 1.0 1.3 k? PDTB123EU 1.54 2.2 2.86 k? pdtb123yu 1.54 2.2 2.86 k? pdtb143eu 3.3 4.7 6.1 k? pdtb143xu 3.3 4.7 6.1 k? pdtb114eu 7.0 10 13 k? r2/r1 bias resistor ratio pdtb113eu 0.9 1.0 1.1 pdtb113zu 9.0 10 11 PDTB123EU 0.9 1.0 1.1 pdtb123yu 4.1 4.55 5.0 pdtb143eu 0.9 1 1.1 pdtb143xu 1.91 2.13 2.34 pdtb114eu 0.9 1.0 1.1 c c collector capacitance v cb = ? 10 v; i e = i e = 0 a; f = 1 mhz - 11 - pf f t transition frequency v ce = ? 5 v; i c = ? 50 ma; ? f = 100 mhz [1] - 140 - mhz table 8. characteristics ?continued t amb = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 8 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 4. pdtb113eu: dc current gain as a function of colle ctor current; typical values fig 5. pdtb113eu: collec tor-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 6. pdtb113eu: on-state input voltage as a function of collector current; typical values fig 7. pdtb113eu: off-state input voltage as a function of collector current; typical values 006aaa345 1 10 10 2 10 3 h fe 10 ?1 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 (1) (2) (3) 006aaa346 i c (ma) ?10 ?10 3 ?10 2 ?10 ?1 v cesat (v) ?10 ?2 (3) (2) (1) 006aaa347 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 ?1 ?10 v i(on) (v) ?10 ?1 (1) (2) (3) i c (ma) ?10 ?1 ?10 ?1 006aaa348 ?1 ?10 v i(off) (v) ?10 ?1 (1) (2) (3)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 9 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 8. pdtb113eu: collector current as a function of collector-emitter voltage; typical values fig 9. pdtb113eu: collector capacitance as a func tion of collector-base voltage; typical values v ce = ?5 v; t amb = 25 ?c fig 10. pdtb113eu: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012067 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -1 ma -1.3 -1.6 -1.9 -2.2 -2.5 -2.8 -3.1 -3.4 -3.7 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012068 20 10 30 40 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 10 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 11. pdtb113zu: dc current gain as a function of colle ctor current; typical values fig 12. pdtb113zu: collector-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 13. pdtb113zu: on-sta te input voltage as a function of collector current; typical values fig 14. pdtb113zu: off-state input voltage as a function of collector current; typical values 006aaa349 10 10 2 10 3 h fe 1 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 (1) (2) (3) 006aaa350 i c (ma) ?1 ?10 3 ?10 2 ?10 ?10 ?1 v cesat (v) ?10 ?2 (3) (2) (1) 006aaa351 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 ?1 ?10 v i(on) (v) ?10 ?1 (1) (2) (3) i c (ma) ?10 ?1 ?10 ?1 006aaa352 ?1 ?10 v i(off) (v) ?10 ?1 (1) (2) (3)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 11 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 15. pdtb113zu: collector current as a function of collector-emitter voltage; typical values fig 16. pdtb113zu: collector capacitance as a func tion of collector-base voltage; typical values v ce = ?5 v; t amb = 25 ?c fig 17. pdtb113zu: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012069 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -0.25 ma -0.5 -2 -2.5 -2.25 -0.75 -1.75 -1.5 -1.25 -1 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012070 20 10 30 40 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 12 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 18. PDTB123EU: dc current gain as a function of colle ctor current; typical values fig 19. PDTB123EU: collector-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 20. PDTB123EU: on-state input voltage as a function of collector current; typical values fig 21. PDTB123EU: off-sta te input voltage as a function of collector current; typical values 006aaa353 1 10 10 2 10 3 h fe 10 ?1 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 (1) (2) (3) aaa-012631 i c (ma) -10 -10 3 -10 2 -10 -1 v cesat (v) -10 -2 (1) (2) (3) 006aaa355 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 ?1 ?10 v i(on) (v) ?10 ?1 (1) (2) (3) i c (ma) ?10 ?1 ?10 ?1 006aaa356 ?1 ?10 v i(off) (v) ?10 ?1 (1) (2) (3)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 13 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 22. PDTB123EU: collector current as a function of collector-emitter voltage; typical values fig 23. PDTB123EU: collector capacitance as a func tion of collector-base voltage; typical values v ce = ?5 v; t amb = 25 ?c fig 24. PDTB123EU: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012626 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -0.75 ma -1 -1.25 -1.75 -1.5 -2.5 -2.25 -2.75 -2 -3 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012636 20 10 30 40 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 14 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 25. pdtb123yu: dc current gain as a function of colle ctor current; typical values fig 26. pdtb123yu: collector-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 27. pdtb123yu: on-state input voltage as a function of collector current; typical values fig 28. pdtb123yu: off-sta te input voltage as a function of collector current; typical values 006aaa357 10 10 2 10 3 h fe 1 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 (1) (2) (3) aaa-012632 i c (ma) -1 -10 3 -10 2 -10 -10 -1 v cesat (v) -10 -2 (1) (2) (3) 006aaa359 i c (ma) ?10 ?1 ?10 3 ?10 2 ?1 ?10 ?1 ?10 v i(on) (v) ?10 ?1 (1) (2) (3) i c (ma) ?10 ?1 ?10 ?1 006aaa360 ?1 ?10 v i(off) (v) ?10 ?1 (1) (2) (3)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 15 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 29. pdtb123yu: collector current as a function of collector-emitter voltage; typical values fig 30. pdtb123yu: collector capacitance as a func tion of collector-base voltage; typical values v ce = ?5 v; t amb = 25 ?c fig 31. pdtb123yu: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012627 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -0.55 ma -0.8 -1.05 -1.55 -1.3 -2.3 -2.05 -2.55 -1.8 -2.8 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012637 20 10 30 40 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 16 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 32. pdtb143eu: dc current gain as a function of colle ctor current; typical values fig 33. pdtb143eu: collector-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 34. pdtb143eu: on-state input voltage as a function of collector current; typical values fig 35. pdtb143eu: off-sta te input voltage as a function of collector current; typical values aaa-012641 10 2 10 10 3 h fe 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3) aaa-012633 i c (ma) -1 -10 3 -10 2 -10 -10 -1 v cesat (v) -10 -2 (1) (2) (3) aaa-012644 -10 -1 -10 2 v i(on) (v) -10 -1 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3) i c (ma) -10 -1 -10 -1 aaa-012647 -1 -10 v i(off) (v) -10 -1 (1) (3) (2)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 17 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 36. pdtb143eu: collector current as a function of collector-emitter voltage; typical values fig 37. pdtb143eu: collector capacitance as a func tion of collector-base voltage; typical values v ce = ?5 v; t amb = 25 ?c fig 38. pdtb143eu: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012628 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -0.2 ma -0.7 -0.45 -0.95 -1.45 -1.95 -1.2 -1.7 -2.2 -2.45 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012638 8 12 4 16 20 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 18 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 39. pdtb143xu: dc current gain as a function of colle ctor current; typical values fig 40. pdtb143xu: collector-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 41. pdtb143xu: on-state input voltage as a function of collector current; typical values fig 42. pdtb143xu: off-sta te input voltage as a function of collector current; typical values aaa-012642 10 2 10 10 3 h fe 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3) aaa-012634 i c (ma) -1 -10 3 -10 2 -10 -10 -1 v cesat (v) -10 -2 (1) (2) (3) aaa-012645 -10 -1 -10 2 v i(on) (v) -10 -1 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3) i c (ma) -10 -1 -10 -1 aaa-012648 -1 -10 v i(off) (v) -10 -1 (1) (3) (2)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 19 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 43. pdtb143xu: collector current as a function of collector-emitter voltage; typical values fig 44. pdtb143xu: collector capacitance as a func tion of collector-base voltage; typical values v ce = ?5 v; t amb = 25 ?c fig 45. pdtb143xu: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012629 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -0.55 ma -0.8 -1.05 -1.55 -1.3 -2.3 -2.05 -2.55 -1.8 -2.8 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012639 8 12 4 16 20 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 20 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors v ce = ?5 v (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c i c /i b = 20 (1) t amb = 100 ? c (2) t amb = 25 ?c (3) t amb = ?40 ?c fig 46. pdtb114eu: dc current gain as a function of colle ctor current; typical values fig 47. pdtb114eu: collec tor-emitter saturation volt age as a function of collector current; typical values v ce = ?0.3 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c v ce = ?5 v (1) t amb = ?40 ?c (2) t amb = 25 ?c (3) t amb = 100 ? c fig 48. pdtb114eu: on-state input voltage as a function of collector current; typical values fig 49. pdtb114eu: off-state input voltage as a func tion of collector current; typical values aaa-012643 10 2 10 10 3 h fe 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3) aaa-012635 i c (ma) -1 -10 3 -10 2 -10 -10 -1 v cesat (v) -10 -2 (1) (2) (3) aaa-012646 -10 -1 -10 2 v i(on) (v) -10 -1 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3) i c (ma) -10 -1 -10 -1 aaa-012649 -1 -10 v i(off) (v) -10 -1 (1) (3) (2)
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 21 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors t amb = 25 ?c f = 1 mhz; t amb = 25 ?c fig 50. pdtb114eu: collector current as a function of collector-emitter voltage; typical values fig 51. pdtb114eu: collector capacitance as a func tion of collector-base voltage; typical values of built-in transistor v ce = ?5 v; t amb = 25 ?c fig 52. pdtb114eu: transition frequency as a function of collector current; typical values of built-in transistor v ce (v) 0-5 -4 -2 -3 -1 aaa-012630 -0.2 -0.3 -0.1 -0.4 -0.5 i c (a) 0 i b = -0.55 ma -0.8 -1.05 -1.55 -1.3 -2.3 -2.05 -2.55 -1.8 -2.8 v cb (v) 0 -50 -40 -20 -30 -10 aaa-012640 20 10 30 40 c c (pf) 0 aaa-012064 10 2 10 10 3 f t (mhz) 1 i c (ma) -10 -1 -10 3 -10 2 -1 -10
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 22 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline fig 53. package outline pdtb1xxxu series (sot323/sc-70) 04-11-04 dimensions in mm 0.45 0.15 1.1 0.8 2.2 1.8 2.2 2.0 1.35 1.15 1.3 0.4 0.3 0.25 0.10 12 3
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 23 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 10. soldering dimensions in mm fig 54. reflow soldering footprint pdtb1xxxu series (sot323/sc-70) dimensions in mm fig 55. wave soldering footprint pdtb1xxxu series (sot323/sc-70) solder lands solder resist occupied area solder paste sot323_fr 2.65 2.35 0.6 (3) 0.5 (3) 0.55 (3) 1.325 1.85 1.3 3 2 1 dimensions in mm sot323_fw 3.65 2.1 1.425 (3) 4.6 09 (2) 2.575 1.8 solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 24 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 11. revision history table 9. revision history document id release date data sheet status change notice supersedes pdtb1xxxu_ser v.1 20140506 product data sheet - -
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 25 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of mu ltiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only . the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet wit h the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product dat a sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be lia ble fo r any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason what soe ver, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes t o information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semicon ducto rs product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. applications ? applications that are described herein for any of these prod uct s are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and pr oduct s using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liabil i ty related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in th e absolute maximum ratings system of iec 60134) will cause permanent damag e to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors prod uct s are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agre ement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objec tive specif icati on for product development. preliminary [short] data sheet qualification this document contains data from t he preliminary specification. product [short] data sheet production this document contains the product specification.
pdtb1xxxu_ser all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all righ ts reserved. product data sheet rev. 1 ? 6 may 2014 26 of 27 nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may b e subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the pro duct dat a given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. translations ? a non-english (translated) version of a document is for ref e rence only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors pdtb1xxxu series 500 ma, 50 v pnp resistor-equipped transistors ? nxp semiconductors n.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com ? for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 6 may 2014 document identifier: pdtb1xxxu_ser please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 22 8.1 quality information . . . . . . . . . . . . . . . . . . . . . 22 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 22 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 24 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 25 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 25 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26 13 contact information. . . . . . . . . . . . . . . . . . . . . 26 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

▲Up To Search▲

Price & Availability of PDTB123EU

	To Download PDTB123EU Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .